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Gasb-Based Type-I Diode Lasers Operating at 3 M and Above download

Gasb-Based Type-I Diode Lasers Operating at 3 M and Above download

Gasb-Based Type-I Diode Lasers Operating at 3 M and Above by Takashi Hosoda
Gasb-Based Type-I Diode Lasers Operating at 3 M and Above
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Author: Takashi Hosoda
Number of Pages: 84 pages
Published Date: 01 Jun 2012
Publisher: LAP Lambert Academic Publishing
Publication Country: Saarbrucken, Germany
Language: English
Type: Pdf
ISBN: 9783659136535
File size: 46 Mb
File Name: Gasb-Based.Type-I.Diode.Lasers.Operating.at.3.M.and.Above.pdf
Download Link: Gasb-Based Type-I Diode Lasers Operating at 3 M and Above
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High power diode lasers in mid-infrared spectral range have growing demand for a variety of applications including biological spectral analysis, remote sensing, medical diagnostic tools, and surgery instruments. The work presented in this book focuses on GaSb/AlGaAsSb/GaInAsSb material system for type-I diode lasers at the wavelength range above 3 m. The new device design was proposed to reach desirable laser operation wavelength. Besides employing the compressively strained quantum wells (QWs) in the devices active region, the composition of waveguide and barrier material has been modified to optimize the band offsets between QWs and the neighboring layers. The comprehensive study of the characteristics of the devices with different waveguide widths, compositions, and the number of QWs allows us to design and fabricate GaSb-based type-I lasers with world record performance. At room temperature in continuous wave (CW) mode, devices provide 360 mW at 3.0 m; 190 mW at 3.1 m; 165 mW at 3.2 m; 50 mW at 3.3 m; 16 W at 3.4 m.

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